FGH40N60UF igbt equivalent, igbt.
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
* High Input Impedance
* Fast Switching
* These Device is Pb−Free and.
where low conduction and switch−ing losses are essential.
Features
* High Current Capability
* Low Saturation Vo.
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